Organizers:

Xubing Lu (luxubing@m.scnu.edu.cn), South China Normal University, Guangzhou, China

Ji-yan Dai (jiyan.dai@polyu.edu.hk), The Hong Kong Polytechnic University, Hong Kong, China

Scope and topics:

HfO2 has shown its great success as high-k gate dielectric to replace SiO2 in field effect transistor (FET) device in integrated circuit (IC) industry. Recently, HfO2 has also been found to be ferroelectric and exhibit negative capacitance effect in the FET structure. This makes HfO2 even more attractive since the negative capacitance effect results in lower operation voltage of FET and therefore is favourable for lower power consumption of logic and memory IC devices. HfO2 is also very attractive to be extended to ferroelectric random-access memory (FeRAM) and memristors for artificial neural network applications.

Beyond memory applications, the ferroelectricity of HfO2-nased oxide thin films is also strategically important energy storage which will broaden their applications in microelectronic devices. The advantages of high Curie temperature and fast charge/discharge speed of HfO2-based supercapacitors are promising for high-temperature and high-speed applications such as automotive, power transmission, aerospace and 5G communication etc.

List of keynote and invited speakers (to be updated):

TBC